Central Semiconductor
2N1131
Bipolar Transistors - BJT 50Vcbo 50Vcer 35Vceo 0.6A Ic 2.0W PNP
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-39-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 35 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 1.5 V
- Maximum DC Collector Current
- 0.6 A
- Gain Bandwidth Product fT
- 50 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- Continuous Collector Current
- 0.6 A
Show more parameters (4)
- DC Collector/Base Gain hfe Min
- 15 at 5 mA, 10 V
- Pd - Power Dissipation
- 600 mW
- Part # Aliases
- 2N1131 PBFREE
- Unit Weight
- 0.035486 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.