Toshiba
2SA1955FVATPL3Z
Bipolar Transistors - BJT PNP Trans -0.4A LN -12V VCEO
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SA1955
- Package
- SOT-723-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
7 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 12 V
- Collector-Emitter Saturation Voltage
- - 0.03 V
- DC Current Gain hFE Max
- 1000
- Continuous Collector Current
- - 0.4 A
- DC Collector/Base Gain hfe Min
- 300
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.