Renesas Electronics
RBA250N10CHPF-4UA02#GB0
MOSFETs Nch Power MOSFET 100V 250A 2.4mohm TO-263-7 / D2PAK-7
Basic Information
View Datasheet ↗- Manufacturer
- Renesas Electronics
- Product Category
- MOSFETs
- Package
- TO-263-7
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
19 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 250 A
- Rds On - Drain-Source Resistance
- 2.4 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 3.8 V
- Qg - Gate Charge
- 190 nC
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 348 W
- Channel Mode
- Enhancement
Show more parameters (7)
- Configuration
- Single
- Country of Origin
- MY
- Fall Time
- 15 ns
- Rise Time
- 30 ns
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 130 ns
- Typical Turn-On Delay Time
- 30 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.