MACOM
CGH31240F
GaN FETs Amplifier, 240W, 3.1GHz, GaN HEMT, 28V
Basic Information
View Datasheet ↗- Manufacturer
- MACOM
- Product Category
- GaN FETs
- Package
- 440201
- Mounting Style
- Screw Mount
- Packaging
- Tray
Technical Specifications
18 parameters- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 120 V
- Id - Continuous Drain Current
- 24 A
- Vgs th - Gate-Source Threshold Voltage
- - 3 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 345 W
- Country of Origin
- US
- Gain
- 12 dB
- Maximum Operating Frequency
- 3.1 GHz
- Minimum Operating Frequency
- 2.7 GHz
- Output Power
- 240 W
Show more parameters (6)
- Product
- GaN HEMTs
- Technology
- GaN
- Transistor Type
- GaN HEMT
- Type
- GaN SiC HEMT
- Vgs - Gate-Source Breakdown Voltage
- - 10 V to 2 V
- Unit Weight
- 1.132118 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.