Microchip Technology
APT100GN120JDQ4
IGBT Modules IGBT Fieldstop Low Frequency Combi 1200 V 100 A SOT-227
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip Technology
- Product Category
- IGBT Modules
- Package
- ISOTOP-4
- Mounting Style
- SMD/SMT
- Packaging
- Tube
Technical Specifications
13 parameters- Product
- SiC IGBT Modules
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 1.2 kV
- Collector-Emitter Saturation Voltage
- 1.7 V
- Continuous Collector Current at 25 C
- 153 A
- Gate-Emitter Leakage Current
- 600 nA
- Pd - Power Dissipation
- 446 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Country of Origin
- PH
- Maximum Gate Emitter Voltage
- 30 V
- Technology
- SiC
Show more parameters (1)
- Unit Weight
- 1.030000 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.