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STMicroelectronics

BUF420AW

Bipolar Transistors - BJT NPN High Volt Power

Basic Information

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Manufacturer
STMicroelectronics
Product Category
Bipolar Transistors - BJT
Series
BUF420AW
Package
TO-247-3
Mounting Style
Through Hole
RoHS
Compliant (source record)

Technical Specifications

15 parameters
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
450 V
Collector- Base Voltage VCBO
1000 V
Emitter- Base Voltage VEBO
7 V
Collector-Emitter Saturation Voltage
0.8 V
Maximum DC Collector Current
30 A
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Height
20.15 mm
Length
15.75 mm
Width
5.15 mm
Show more parameters (3)
Continuous Collector Current
30 A
Pd - Power Dissipation
200 W
Unit Weight
0.229281 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

BUF420AW Specifications and Datasheet | ChipSourceHub