Diodes Incorporated
FMMTL619TA
Bipolar Transistors - BJT NPN Medium Power
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- FMMTL
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
19 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 195 mV
- Maximum DC Collector Current
- 1.25 A
- Pd - Power Dissipation
- 500 mW
- Gain Bandwidth Product fT
- 180 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 450 at 200 mA, 5 V
Show more parameters (7)
- Height
- 1 mm
- Length
- 3.05 mm
- Technology
- Si
- Width
- 1.4 mm
- Continuous Collector Current
- 1.25 A
- DC Collector/Base Gain hfe Min
- 30 at 2 A, 5 V
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.