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Vishay / Siliconix

SQSA70CENW-T1_GE3

MOSFETs N-CHANNEL 150-V (D-S) 175C MOSFET

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay / Siliconix
Product Category
MOSFETs
Series
SQS
Package
PowerPAK-1212-8W-8
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

21 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
150 V
Id - Continuous Drain Current
18 A
Rds On - Drain-Source Resistance
68.5 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
3.5 V
Qg - Gate Charge
12 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
62.5 W
Show more parameters (9)
Channel Mode
Enhancement
Tradename
TrenchFET
Configuration
Single
Country of Origin
CN
Fall Time
20 ns
Rise Time
10 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
30 ns
Typical Turn-On Delay Time
20 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SQSA70CENW-T1_GE3 Specifications and Datasheet | ChipSourceHub