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ON Semiconductor

MMBT5401M3T5G

Bipolar Transistors - BJT 150 V, 60 mA

Basic Information

View Datasheet ↗
Manufacturer
ON Semiconductor
Product Category
Bipolar Transistors - BJT
Package
SOT-723-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

14 parameters
Technology
Si
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 150 V
Collector- Base Voltage VCBO
- 160 V
Emitter- Base Voltage VEBO
- 5 V
Collector-Emitter Saturation Voltage
- 0.15 V
Maximum DC Collector Current
- 60 mA
Gain Bandwidth Product fT
180 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
- 50 mA
Show more parameters (2)
DC Collector/Base Gain hfe Min
20
Pd - Power Dissipation
130 mW

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MMBT5401M3T5G Specifications and Datasheet | ChipSourceHub