Infineon Technologies
BF 999 E6327
RF MOSFET Transistors Silicon N-Channel MOSFET Triode
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- RF MOSFET Transistors
- Series
- BF999
- Package
- SOT-23
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 30 A
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Height
- 1 mm
- Length
- 2.9 mm
- Type
- RF Small Signal MOSFET
- Width
- 1.3 mm
- Pd - Power Dissipation
- 200 mW
Show more parameters (3)
- Vgs - Gate-Source Voltage
- 6.5 V
- Part # Aliases
- BF999E6327HTSA1 BF999E6327XT SP000010985
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.