Infineon Technologies
BSM50GD120DN2E3226
IGBT Modules N-CH 1.2KV 50A
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- IGBT Modules
- Package
- EconoPACK 2
- Mounting Style
- Chassis Mount
- Packaging
- Tray
Technical Specifications
14 parameters- Product
- IGBT Silicon Modules
- Configuration
- Hex
- Collector- Emitter Voltage VCEO Max
- 1200 V
- Collector-Emitter Saturation Voltage
- 2.5 V
- Continuous Collector Current at 25 C
- 50 A
- Gate-Emitter Leakage Current
- 200 nA
- Pd - Power Dissipation
- 350 W
- Maximum Operating Temperature
- + 150 C
- Height
- 17 mm
- Length
- 107.5 mm
- Technology
- Si
- Width
- 45.5 mm
Show more parameters (2)
- Maximum Gate Emitter Voltage
- 20 V
- Part # Aliases
- BSM50GD120DN2E3226BOSA1 SP000100366
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.