Nexperia
PMST5550,135
Bipolar Transistors - BJT TRANS HV TAPE-11
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-323-3
- Mounting Style
- SMD/SMT
- Packaging
- 100 mA
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 140 V
- Collector- Base Voltage VCBO
- 160 V
- Emitter- Base Voltage VEBO
- 6 V
- Maximum DC Collector Current
- 0.3 A
- Gain Bandwidth Product fT
- 300 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 60 at 1 mA, 5 V
- Height
- 1 mm
- Length
- 2.2 mm
Show more parameters (6)
- Width
- 1.35 mm
- DC Collector/Base Gain hfe Min
- 60 at 1 mA, 5 V, 60 at 10 mA, 5 V, 20 at 50 mA, 5 V
- Pd - Power Dissipation
- 200 mW
- Qualification
- AEC-Q101
- Part # Aliases
- /T3 PMST5550
- Unit Weight
- 0.000176 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.