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Comchip Technology

MMBT2222A-G

RF Bipolar Transistors VCEO=40V IC=600mA

Basic Information

View Datasheet ↗
Manufacturer
Comchip Technology
Product Category
RF Bipolar Transistors
Series
MMBT2222A
Package
SOT-23-3
Mounting Style
SMD/SMT
Packaging
Bipolar Power
RoHS
Compliant (source record)

Technical Specifications

14 parameters
Transistor Type
Bipolar Power
Technology
Si
Transistor Polarity
NPN
DC Collector/Base Gain hfe Min
40
Collector- Emitter Voltage VCEO Max
40 V
Emitter- Base Voltage VEBO
6 V
Continuous Collector Current
600 mA
Maximum Operating Temperature
+ 150 C
Configuration
Single
Operating Frequency
300 MHz
Type
RF Bipolar Power
Maximum DC Collector Current
600 mA
Show more parameters (2)
Pd - Power Dissipation
300 mW
Unit Weight
0.003951 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MMBT2222A-G Specifications and Datasheet | ChipSourceHub