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Vishay Semiconductors

SISA72ADN-T1-GE3

MOSFETs 40V Vds; 20/-16V Vgs PowerPAK 1212-8

Basic Information

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Manufacturer
Vishay
Brand
Vishay Semiconductors
Product Category
MOSFETs
Series
SISA
Package
PowerPAK1212-8
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

23 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
40 V
Id - Continuous Drain Current
94 A
Rds On - Drain-Source Resistance
3.25 mOhms
Vgs - Gate-Source Voltage
- 16 V, 20 V
Vgs th - Gate-Source Threshold Voltage
1 V
Qg - Gate Charge
50 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
52 W
Show more parameters (11)
Channel Mode
Enhancement
Tradename
TrenchFET, PowerPAK
Configuration
Single
Country of Origin
CN
Fall Time
5 ns
Forward Transconductance - Min
76 S
Rise Time
7 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
35 ns
Typical Turn-On Delay Time
15 ns
Unit Weight
0.032487 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SISA72ADN-T1-GE3 Specifications and Datasheet | ChipSourceHub