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ON Semiconductor / Fairchild

KSE45H11

Bipolar Transistors - BJT PNP Epitaxial Sil

Basic Information

View Datasheet ↗
Manufacturer
ON Semiconductor
Brand
ON Semiconductor / Fairchild
Product Category
Bipolar Transistors - BJT
Series
KSE45H
Package
TO-220-3
Mounting Style
Through Hole
Packaging
Bulk
RoHS
Compliant (source record)

Technical Specifications

16 parameters
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 80 V
Emitter- Base Voltage VEBO
- 5 V
Collector-Emitter Saturation Voltage
- 1 V
Maximum DC Collector Current
10 A
Gain Bandwidth Product fT
40 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Height
9.4 mm
Length
10.1 mm
Width
4.7 mm
Show more parameters (4)
Continuous Collector Current
- 10 A
DC Collector/Base Gain hfe Min
60
Pd - Power Dissipation
50 W
Unit Weight
0.063493 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

KSE45H11 Specifications and Datasheet | ChipSourceHub