Toshiba
TTA004B,Q
Bipolar Transistors - BJT PNP -2.5A 1.5W 280 HFE -0.5V Trans
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- TTA004B
- Package
- TO-126N-3
- Mounting Style
- Through Hole
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 160 V
- Collector- Base Voltage VCBO
- - 160 V
- Emitter- Base Voltage VEBO
- - 6 V
- Collector-Emitter Saturation Voltage
- - 500 mV
- Maximum DC Collector Current
- - 1.5 A
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 280
Show more parameters (4)
- Continuous Collector Current
- - 1.5 A
- DC Collector/Base Gain hfe Min
- 140
- Pd - Power Dissipation
- 1.5 W
- Unit Weight
- 0.165788 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.