IXYS
IXA45IF1200HB
IGBT Transistors N-Channel: Power MOSFET w/Fast Diode
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- IGBT Transistors
- Series
- IXA45IF1200HB
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 1200 V
- Collector-Emitter Saturation Voltage
- 1.8 V
- Maximum Gate Emitter Voltage
- 20 V
- Continuous Collector Current at 25 C
- 78 A
- Pd - Power Dissipation
- 325 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current Ic Max
- 45 A
- Gate-Emitter Leakage Current
- 500 nA
- Tradename
- XPT
Show more parameters (1)
- Unit Weight
- 1.340411 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.