Central Semiconductor
PN5129 TIN/LEAD
Bipolar Transistors - BJT NPN 15Vcbo 12Vceo 3.0Vebo 150mA 10pF
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- PN5129
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
8 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Base Voltage VCBO
- 15 V
- Emitter- Base Voltage VEBO
- 3 V
- Collector-Emitter Saturation Voltage
- 250 mV
- DC Collector/Base Gain hfe Min
- 35 at 10 V, 50 mA
- DC Current Gain hFE Max
- 350 at 10 V, 50 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.