ChipSourceHub

IXYS

IXFX48N60Q3

MOSFET Q3Class HiPerFET Pwr MOSFET 600V/48A

Basic Information

View Datasheet ↗
Manufacturer
IXYS
Product Category
MOSFET
Series
IXFX48N60
Package
TO-247-3
Mounting Style
Through Hole
Packaging
Tube
RoHS
Compliant (source record)

Technical Specifications

14 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
600 V
Id - Continuous Drain Current
48 A
Rds On - Drain-Source Resistance
140 mOhms
Vgs - Gate-Source Voltage
30 V
Qg - Gate Charge
140 nC
Pd - Power Dissipation
1 kW
Configuration
Single
Tradename
HiPerFET
Transistor Type
1 N-Channel
Show more parameters (2)
Rise Time
300 ns
Unit Weight
0.056438 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

IXFX48N60Q3 Specifications and Datasheet | ChipSourceHub