STMicroelectronics
STGB10H60DF
IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 10 A high speed
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- IGBT Transistors
- Series
- STGB10H60DF
- Package
- D2PAK
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 1.5 V
- Maximum Gate Emitter Voltage
- 20 V
- Continuous Collector Current at 25 C
- 20 A
- Pd - Power Dissipation
- 115 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Gate-Emitter Leakage Current
- 250 nA
- Unit Weight
- 0.070548 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.