Infineon Technologies
IPT059N15N3ATMA1
MOSFET MV POWER MOS
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Series
- OptiMOS 3
- Package
- PG-HSOF-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
26 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 150 V
- Id - Continuous Drain Current
- 155 A
- Rds On - Drain-Source Resistance
- 5.9 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 2 V
- Vgs - Gate-Source Voltage
- 10 V
- Qg - Gate Charge
- 69 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 375 W
Show more parameters (14)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- OptiMOS
- Height
- 2.4 mm
- Length
- 10.58 mm
- Transistor Type
- 1 N-Channel
- Width
- 10.1 mm
- Forward Transconductance - Min
- 86 S
- Fall Time
- 14 ns
- Rise Time
- 35 ns
- Typical Turn-Off Delay Time
- 46 ns
- Typical Turn-On Delay Time
- 25 ns
- Part # Aliases
- IPT059N15N3 SP001100162
- Unit Weight
- 0.002293 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.