MACOM
GTVA261701FA-V1-R0
GaN FETs RF LDMOS FET
Basic Information
View Datasheet ↗- Manufacturer
- MACOM
- Product Category
- GaN FETs
- Package
- H-37265J-2
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
13 parameters- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 150 V
- Id - Continuous Drain Current
- 7.5 A
- Vgs th - Gate-Source Threshold Voltage
- - 3.8 V
- Maximum Operating Temperature
- + 225 C
- Configuration
- Single
- Country of Origin
- US
- Gain
- 17 dB
- Maximum Operating Frequency
- 2.69 GHz
- Minimum Operating Frequency
- 2.62 GHz
- Output Power
- 170 W
- Technology
- GaN
Show more parameters (1)
- Transistor Type
- GaN HEMT
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.