Infineon Technologies
IPP65R065C7XKSA1
MOSFET HIGH POWER_NEW
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Series
- CoolMOS C7
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
25 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Id - Continuous Drain Current
- 33 A
- Rds On - Drain-Source Resistance
- 65 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 3 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 64 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 171 W
Show more parameters (13)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- CoolMOS
- Height
- 15.65 mm
- Length
- 10 mm
- Transistor Type
- 1 N-Channel
- Width
- 4.4 mm
- Fall Time
- 7 ns
- Rise Time
- 14 ns
- Typical Turn-Off Delay Time
- 72 ns
- Typical Turn-On Delay Time
- 17 ns
- Part # Aliases
- IPP65R065C7 SP001080100
- Unit Weight
- 0.211644 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.