MACOM
CG2H80030D-GP4
GaN FETs GaN HEMT Die DC-8.0GHz, 30 Watt
Basic Information
View Datasheet ↗- Manufacturer
- MACOM
- Product Category
- GaN FETs
- Package
- Die
- Mounting Style
- SMD/SMT
- Packaging
- Gel Pack
Technical Specifications
15 parameters- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 120 V
- Id - Continuous Drain Current
- 3 A
- Rds On - Drain-Source Resistance
- 410 mOhms
- Vgs th - Gate-Source Threshold Voltage
- - 3 V
- Maximum Operating Temperature
- + 225 C
- Country of Origin
- US
- Gain
- 16.5 dB
- Maximum Operating Frequency
- 8 GHz
- Minimum Operating Frequency
- 0 Hz
- Output Power
- 30 W
- Technology
- GaN
Show more parameters (3)
- Transistor Type
- GaN HEMT
- Vgs - Gate-Source Breakdown Voltage
- - 10 V, 2 V
- Unit Weight
- 0.189255 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.