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Diodes Incorporated

DDTC115TE-7-F

Bipolar Transistors - Pre-Biased PRE-BIAS NPN 150mW

Basic Information

View Datasheet ↗
Manufacturer
Diodes Incorporated
Product Category
Bipolar Transistors - Pre-Biased
Series
DDTC115
Package
SOT-523-3
Mounting Style
SMD/SMT
Packaging
Reel
RoHS
Compliant (source record)

Technical Specifications

17 parameters
Configuration
Single
Transistor Polarity
NPN
Typical Input Resistor
100 kOhms
DC Collector/Base Gain hfe Min
100
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
0.1 A
Peak DC Collector Current
100 mA
Pd - Power Dissipation
150 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
600
Emitter- Base Voltage VEBO
5 V
Show more parameters (5)
Height
0.75 mm
Length
1.6 mm
Type
NPN Small Signal Surface Mount Transistor
Width
0.8 mm
Unit Weight
0.000071 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

DDTC115TE-7-F Specifications and Datasheet | ChipSourceHub