IXYS
IXFA3N120-TRR
MOSFET IXFA3N120 TRR
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- MOSFET
- Series
- HiPerFET
- Package
- TO-263-3
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
19 parameters- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 1200 V
- Id - Continuous Drain Current
- 3 A
- Rds On - Drain-Source Resistance
- 4.5 Ohms
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 39 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 200 W
- Configuration
- Single
Show more parameters (7)
- Channel Mode
- Enhancement
- Transistor Type
- 1 N-Channel
- Forward Transconductance - Min
- 1.5 S
- Fall Time
- 18 ns
- Rise Time
- 15 ns
- Typical Turn-Off Delay Time
- 32 ns
- Typical Turn-On Delay Time
- 17 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.