Infineon / IR
IRLR3105TRPBF
MOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon / IR
- Product Category
- MOSFET
- Package
- TO-252-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
26 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 55 V
- Id - Continuous Drain Current
- 25 A
- Rds On - Drain-Source Resistance
- 43 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 3 V
- Vgs - Gate-Source Voltage
- 16 V
- Qg - Gate Charge
- 13.3 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 57 W
Show more parameters (14)
- Configuration
- Single
- Channel Mode
- Enhancement
- Height
- 2.3 mm
- Length
- 6.5 mm
- Transistor Type
- 1 N-Channel
- Type
- HEXFET Power MOSFET
- Width
- 6.22 mm
- Forward Transconductance - Min
- 15 S
- Fall Time
- 37 ns
- Rise Time
- 57 ns
- Typical Turn-Off Delay Time
- 25 ns
- Typical Turn-On Delay Time
- 8 ns
- Part # Aliases
- SP001578856
- Unit Weight
- 0.139332 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.