Infineon Technologies
IKY120N65EH7XKSA1
IGBTs 650 V, 120 A IGBT with anti-parallel diode in TO247PLUS-4 package
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- IGBTs
- Series
- IGBT7 H7
- Package
- TO-247-4
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
15 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.6 V
- Maximum Gate Emitter Voltage
- - 20 V, 20 V
- Continuous Collector Current at 25 C
- 160 A
- Pd - Power Dissipation
- 498 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 175 C
- Country of Assembly
- CN
- Country of Diffusion
- DE
- Country of Origin
- DE
Show more parameters (3)
- Gate-Emitter Leakage Current
- 100 nA
- Tradename
- TRENCHSTOP
- Part # Aliases
- IKY120N65EH7 SP005588849
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.