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onsemi

FDC645N

MOSFETs SSOT-6 N-CH

Basic Information

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Manufacturer
onsemi
Product Category
MOSFETs
Series
FDC645N
Package
SSOT-6
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

26 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
5.5 A
Rds On - Drain-Source Resistance
30 mOhms
Vgs - Gate-Source Voltage
- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage
800 mV
Qg - Gate Charge
21 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
1.6 W
Show more parameters (14)
Channel Mode
Enhancement
Tradename
PowerTrench
Configuration
Single
Country of Assembly
MY
Country of Diffusion
KR
Country of Origin
PH
Fall Time
9 ns
Forward Transconductance - Min
33 S
Rise Time
9 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
35 ns
Typical Turn-On Delay Time
8 ns
Part # Aliases
FDC645N_NL
Unit Weight
0.001270 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

FDC645N Specifications and Datasheet | ChipSourceHub