Infineon Technologies
BC817UE6327HTSA1
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR ARRAY
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- Bipolar Transistors - BJT
- Series
- BC817
- Package
- SC-74-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 45 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 0.7 V
- Maximum DC Collector Current
- 1000 mA
- Gain Bandwidth Product fT
- 170 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 400
- Continuous Collector Current
- 500 mA
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 160
- Pd - Power Dissipation
- 330 mW
- Part # Aliases
- 817U BC BC817UE6327XT E6327 SP000012394
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.