Vishay / Siliconix
SQM40081EL_GE3
MOSFET 40V Vds 20V Vgs TO-263
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay / Siliconix
- Product Category
- MOSFET
- Series
- SQ
- Package
- TO-263-3
- Mounting Style
- SMD/SMT
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
20 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 40 V
- Id - Continuous Drain Current
- 50 A
- Rds On - Drain-Source Resistance
- 8.5 mOhms
- Vgs th - Gate-Source Threshold Voltage
- - 2.5 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 230 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 107 W
Show more parameters (8)
- Configuration
- Single
- Channel Mode
- Enhancement
- Transistor Type
- 1 P-Channel
- Forward Transconductance - Min
- 92 S
- Fall Time
- 153 ns
- Rise Time
- 230 ns
- Typical Turn-Off Delay Time
- 103 ns
- Typical Turn-On Delay Time
- 16 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.