Vishay / Siliconix
SI1900DL-T1-GE3
MOSFET 30V Vds 20V Vgs SC70-6
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay / Siliconix
- Product Category
- MOSFET
- Series
- SI1
- Package
- SOT-363-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
25 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 630 mA
- Rds On - Drain-Source Resistance
- 480 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 1.4 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 300 mW
Show more parameters (13)
- Configuration
- Dual
- Channel Mode
- Enhancement
- Tradename
- TrenchFET
- Height
- 1 mm
- Length
- 2.1 mm
- Transistor Type
- 2 N-Channel
- Width
- 1.25 mm
- Forward Transconductance - Min
- 0.75 S
- Fall Time
- 7 ns
- Rise Time
- 8 ns
- Typical Turn-Off Delay Time
- 8 ns
- Typical Turn-On Delay Time
- 5 ns
- Unit Weight
- 0.000265 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.