Panjit
PCDP1265G1_T0_00001
SiC Schottky Diodes 650V SiC Schottky Barrier Diode
Basic Information
View Datasheet ↗- Manufacturer
- Panjit
- Product Category
- SiC Schottky Diodes
- Series
- SiC Gen.1
- Package
- TO-220AC-2
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
12 parameters- Configuration
- Single
- If - Forward Current
- 12 A
- Vrrm - Repetitive Reverse Voltage
- 650 V
- Vf - Forward Voltage
- 1.5 V
- Ifsm - Forward Surge Current
- 640 A
- Ir - Reverse Current
- 2.5 uA
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Country of Origin
- CN
- Pd - Power Dissipation
- 102.7 W
- Vr - Reverse Voltage
- 650 V
- Unit Weight
- 0.066668 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.