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STMicroelectronics

STP80NF12

MOSFET N-Ch 120 Volt 80 Amp

Basic Information

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Manufacturer
STMicroelectronics
Product Category
MOSFET
Series
STP80NF12
Package
TO-220-3
Mounting Style
Through Hole
RoHS
Compliant (source record)

Technical Specifications

24 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
120 V
Id - Continuous Drain Current
80 A
Rds On - Drain-Source Resistance
18 mOhms
Vgs - Gate-Source Voltage
20 V
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
300 W
Configuration
Single
Channel Mode
Enhancement
Show more parameters (12)
Tradename
STripFET
Height
9.15 mm
Length
10.4 mm
Transistor Type
1 N-Channel
Type
MOSFET
Width
4.6 mm
Forward Transconductance - Min
80 S
Fall Time
115 ns
Rise Time
145 ns
Typical Turn-Off Delay Time
134 ns
Typical Turn-On Delay Time
40 ns
Unit Weight
0.050717 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

STP80NF12 Specifications and Datasheet | ChipSourceHub