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IXYS

IXTP86N20X4

MOSFETs TO220 200V 86A N-CH X4CLASS

Basic Information

View Datasheet ↗
Manufacturer
IXYS
Product Category
MOSFETs
Package
TO-220-3
Mounting Style
Through Hole
Packaging
Tube

Technical Specifications

22 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
200 V
Id - Continuous Drain Current
86 A
Rds On - Drain-Source Resistance
13 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
4.5 V
Qg - Gate Charge
70 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
300 W
Show more parameters (10)
Channel Mode
Enhancement
Configuration
Single
Country of Origin
KR
Fall Time
35 ns
Forward Transconductance - Min
50 S
Rise Time
38 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
76 ns
Typical Turn-On Delay Time
27 ns
Unit Weight
0.068784 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

IXTP86N20X4 Specifications and Datasheet | ChipSourceHub