Vishay / Siliconix
IRFP450APBF
MOSFET N-CH 500V HEXFET MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay / Siliconix
- Product Category
- MOSFET
- Series
- IRFP
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- E
Technical Specifications
21 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 500 V
- Id - Continuous Drain Current
- 14 A
- Rds On - Drain-Source Resistance
- 400 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 2 V
- Vgs - Gate-Source Voltage
- 10 V
- Qg - Gate Charge
- 64 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 190 W
Show more parameters (9)
- Configuration
- Single
- Channel Mode
- Enhancement
- Transistor Type
- 1 N-Channel
- Forward Transconductance - Min
- 7.8 S
- Fall Time
- 29 ns
- Rise Time
- 36 ns
- Typical Turn-Off Delay Time
- 35 ns
- Typical Turn-On Delay Time
- 15 ns
- Unit Weight
- 1.340411 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.