Infineon Technologies
IPW60R105CFD7XKSA1
MOSFET HIGH POWER_NEW
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
20 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 600 V
- Id - Continuous Drain Current
- 21 A
- Rds On - Drain-Source Resistance
- 105 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 3.5 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 42 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 106 W
Show more parameters (8)
- Configuration
- Single
- Channel Mode
- Enhancement
- Transistor Type
- 1 N-Channel
- Fall Time
- 8 ns
- Rise Time
- 17 ns
- Typical Turn-Off Delay Time
- 94 ns
- Typical Turn-On Delay Time
- 25 ns
- Part # Aliases
- IPW60R105CFD7 SP001715628
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.