Vishay Semiconductors
SI7172DP-T1-GE3
MOSFETs 200V Vds 20V Vgs PowerPAK SO-8
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay Semiconductors
- Product Category
- MOSFETs
- Series
- SI7
- Package
- PowerPAK-SO-8
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
24 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 200 V
- Id - Continuous Drain Current
- 25 A
- Rds On - Drain-Source Resistance
- 70 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Qg - Gate Charge
- 51 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 96 W
Show more parameters (12)
- Channel Mode
- Enhancement
- Tradename
- TrenchFET
- Configuration
- Single
- Country of Origin
- CN
- Fall Time
- 10 ns
- Forward Transconductance - Min
- 19 S
- Rise Time
- 12 ns
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 26 ns
- Typical Turn-On Delay Time
- 22 ns
- Part # Aliases
- SI7172DP-GE3
- Unit Weight
- 0.017870 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.