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Vishay / Siliconix

SIHF520STRL-GE3

MOSFET 100V Vds 20V Vgs D2PAK (TO-263)

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay / Siliconix
Product Category
MOSFET
Package
TO-263-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

19 parameters
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
100 V
Id - Continuous Drain Current
9.2 A
Rds On - Drain-Source Resistance
270 mOhms
Vgs th - Gate-Source Threshold Voltage
2 V
Vgs - Gate-Source Voltage
20 V
Qg - Gate Charge
16 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
60 W
Configuration
Single
Show more parameters (7)
Channel Mode
Enhancement
Transistor Type
1 N-Channel
Forward Transconductance - Min
2.7 S
Fall Time
20 ns
Rise Time
30 ns
Typical Turn-Off Delay Time
19 ns
Typical Turn-On Delay Time
8.8 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SIHF520STRL-GE3 Specifications and Datasheet | ChipSourceHub