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ON Semiconductor / Fairchild

FQD13N10LTM

MOSFET 100V N-Ch QFET Logic Level

Basic Information

View Datasheet ↗
Manufacturer
ON Semiconductor
Brand
ON Semiconductor / Fairchild
Product Category
MOSFET
Series
FQD13N10L
Package
TO-252-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
E

Technical Specifications

23 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
100 V
Id - Continuous Drain Current
10 A
Rds On - Drain-Source Resistance
180 mOhms
Vgs - Gate-Source Voltage
20 V
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
2.5 W
Configuration
Single
Channel Mode
Enhancement
Show more parameters (11)
Height
2.39 mm
Length
6.73 mm
Transistor Type
1 N-Channel
Type
MOSFET
Width
6.22 mm
Forward Transconductance - Min
8.7 S
Fall Time
72 ns
Rise Time
220 ns
Typical Turn-Off Delay Time
22 ns
Typical Turn-On Delay Time
7.5 ns
Unit Weight
0.009184 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

FQD13N10LTM Specifications and Datasheet | ChipSourceHub