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ON Semiconductor

MMUN2212LT1G

Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN

Basic Information

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Manufacturer
ON Semiconductor
Product Category
Bipolar Transistors - Pre-Biased
Series
MMUN2212L
Package
SOT-23-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

16 parameters
Configuration
Single
Transistor Polarity
NPN
Typical Input Resistor
22 kOhms
Typical Resistor Ratio
1
DC Collector/Base Gain hfe Min
60
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
0.1 A
Peak DC Collector Current
100 mA
Pd - Power Dissipation
246 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
60
Show more parameters (4)
Height
0.94 mm
Length
2.9 mm
Width
1.3 mm
Unit Weight
0.000282 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MMUN2212LT1G Specifications and Datasheet | ChipSourceHub