Taiwan Semiconductor
TSM60NB1R4CH C5G
MOSFET 600V, 4A, 1.4OHMS N Channel Power Mosfet
Basic Information
View Datasheet ↗- Manufacturer
- Taiwan Semiconductor
- Product Category
- MOSFET
- Package
- TO-251-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
20 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 600 V
- Id - Continuous Drain Current
- 3 A
- Rds On - Drain-Source Resistance
- 1 Ohms
- Vgs th - Gate-Source Threshold Voltage
- 2 V
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 7.12 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 28.4 W
Show more parameters (8)
- Configuration
- Single
- Channel Mode
- Enhancement
- Transistor Type
- 1 N-Channel
- Fall Time
- 8.4 ns
- Rise Time
- 11.4 ns
- Typical Turn-Off Delay Time
- 28 ns
- Typical Turn-On Delay Time
- 13.8 ns
- Unit Weight
- 0.011993 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.