IXYS
IXGT50N90B2
IGBT Transistors 50 Amps 900V 2.7 Rds
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- IGBT Transistors
- Series
- IXGT50N90
- Package
- TO-268-3
- Mounting Style
- SMD/SMT
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 900 V
- Collector-Emitter Saturation Voltage
- 2.7 V
- Maximum Gate Emitter Voltage
- 20 V
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current Ic Max
- 75 A
- Height
- 5.1 mm
- Length
- 16.05 mm
- Width
- 14 mm
- Continuous Collector Current
- 75 A
Show more parameters (1)
- Unit Weight
- 0.158733 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.