Infineon Technologies
IPA80R1K4P7XKSA1
MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Series
- CoolMOS P7
- Package
- TO-220FP-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
24 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 800 V
- Id - Continuous Drain Current
- 4 A
- Rds On - Drain-Source Resistance
- 1.4 Ohms
- Vgs th - Gate-Source Threshold Voltage
- 3 V
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 10 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 24 W
Show more parameters (12)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- CoolMOS
- Height
- 16.15 mm
- Length
- 10.65 mm
- Width
- 4.85 mm
- Fall Time
- 20 ns
- Rise Time
- 8 ns
- Typical Turn-Off Delay Time
- 40 ns
- Typical Turn-On Delay Time
- 10 ns
- Part # Aliases
- IPA80R1K4P7 SP001422546
- Unit Weight
- 0.068784 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.