Infineon Technologies
IRGS6B60KTRLPBF
IGBT Transistors 600V 7AD2PAK
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- IGBT Transistors
- Series
- RC
- Package
- TO-263-3
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 1.8 V
- Maximum Gate Emitter Voltage
- 20 V
- Continuous Collector Current at 25 C
- 13 A
- Pd - Power Dissipation
- 90 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Height
- 4.57 mm
- Length
- 10.31 mm
- Width
- 9.45 mm
Show more parameters (4)
- Gate-Emitter Leakage Current
- 100 nA
- Tradename
- TRENCHSTOP
- Part # Aliases
- SP001540974
- Unit Weight
- 0.009185 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.