Toshiba
TK6Q65W,S1Q
MOSFET Power MOSFET N-Channel
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- MOSFET
- Series
- TK6Q65W
- Package
- TO-251-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
23 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Id - Continuous Drain Current
- 5.8 A
- Rds On - Drain-Source Resistance
- 890 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 11 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 60 W
Show more parameters (11)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- DTMOSIV
- Height
- 6.1 mm
- Length
- 6.65 mm
- Width
- 2.3 mm
- Fall Time
- 4 ns
- Rise Time
- 14 ns
- Typical Turn-Off Delay Time
- 45 ns
- Typical Turn-On Delay Time
- 34 ns
- Unit Weight
- 0.139332 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.