IXYS
IXTK90P20P
MOSFET -90.0 Amps -200V 0.044 Rds
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- MOSFET
- Series
- IXTK90P20
- Package
- TO-264-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 200 V
- Id - Continuous Drain Current
- 90 A
- Rds On - Drain-Source Resistance
- 44 mOhms
- Vgs - Gate-Source Voltage
- 20 V
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 890 W
- Configuration
- Single
- Transistor Type
- 1 P-Channel
Show more parameters (1)
- Unit Weight
- 0.352740 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.