Toshiba
SSM3K36FS,LF
MOSFET Small Signal MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- MOSFET
- Series
- SSM3K36
- Package
- SOT-416-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
21 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Id - Continuous Drain Current
- 500 mA
- Rds On - Drain-Source Resistance
- 630 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 350 mV
- Vgs - Gate-Source Voltage
- 5 V
- Qg - Gate Charge
- 1.23 nC
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 150 mW
- Configuration
- Single
Show more parameters (9)
- Channel Mode
- Enhancement
- Tradename
- U-MOSIII
- Height
- 0.7 mm
- Length
- 1.6 mm
- Transistor Type
- 1 N-Channel
- Width
- 0.8 mm
- Typical Turn-Off Delay Time
- 75 ns
- Typical Turn-On Delay Time
- 30 ns
- Unit Weight
- 0.000212 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.