onsemi
FDA59N30
MOSFETs 300V NCH MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- MOSFETs
- Series
- FDA59N30
- Package
- TO-3PN-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
24 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 300 V
- Id - Continuous Drain Current
- 59 A
- Rds On - Drain-Source Resistance
- 56 mOhms
- Vgs - Gate-Source Voltage
- - 30 V, 30 V
- Vgs th - Gate-Source Threshold Voltage
- 3 V
- Qg - Gate Charge
- 100 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 500 W
Show more parameters (12)
- Channel Mode
- Enhancement
- Configuration
- Single
- Country of Assembly
- CN
- Country of Diffusion
- CZ
- Country of Origin
- CN
- Fall Time
- 200 ns
- Rise Time
- 575 ns
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 120 ns
- Typical Turn-On Delay Time
- 140 ns
- Part # Aliases
- FDA59N30_NL
- Unit Weight
- 0.162260 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.