Diodes Incorporated
DMP3099LQ-13
MOSFET MOSFET BVDSS: 25V-30V
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- MOSFET
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
21 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 3.8 A
- Rds On - Drain-Source Resistance
- 65 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 2.1 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 11 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1.08 W
Show more parameters (9)
- Configuration
- Single
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Forward Transconductance - Min
- 3.6 S
- Fall Time
- 15 ns
- Rise Time
- 5 ns
- Typical Turn-Off Delay Time
- 31 ns
- Typical Turn-On Delay Time
- 4.8 ns
- Unit Weight
- 0.000317 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.